PHB152NQ03LT

PHP/PHB152NQ03LT TrenchMOS™ logic level FET Rev. 01 — 20 February 2002 www.DataSheet4U.com Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP152NQ03LT in SOT78 (TO-220AB) PHB152NQ03LT in SOT404 (D2-PAK). 2. Features s Low gate charge s Low on-state resistance. 3. Applications s Optimized for DC to DC convertors. 4. Pinning information Table 1: 1 2 3 mb Pinning - SOT78, SOT404 simplified outline and symbol Simplified outline [1] mb mb Pin Description gate (g) drain (d) source (s) mounting base, connected to drain (d) Symbol d g s MBB076 2 1 MBK106 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages. 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors PHP/PHB152NQ03LT www.DataSheet4U.com TrenchMOS™ logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25° C; VGS = 10 V; ID = 25 A Tj = 25° C; VGS = 5 V; ID = 25 A Typ − − − − 3 3.6 Max 25 75 230 175 4 5 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Paramete...