Document
PHP/PHB45NQ15T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 8 November 2004
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Low on-state resistance s Low thermal resistance s Fast switching s Low gate charge.
1.3 Applications
s DC-to-DC primary side switching s AC-to-DC secondary side rectification.
1.4 Quick reference data
s VDS ≤ 150 V s RDSon ≤ 42 mΩ s ID ≤ 45.1 A s Qgd = 10.3 nC (typ).
2. Pinning information
Table 1: 1 2 3 mb gate drain source mounting base; connected to drain
[1]
Discrete pinning Simplified outline
mb mb
Pin Description
Symbol
D
G
mbb076
S
2 1 1 2 3 3
SOT78 (TO-220AB)
[1] It is not possible to make a connection to pin 2 of the SOT404 package.
SOT404 (D2-PAK)
Philips Semiconductors
PHP/PHB45NQ15T
www.DataSheet4U.com
N-channel TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information Package Name PHP45NQ15T PHB45NQ15T TO-220AB D2-PAK Description Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead TO-220AB Version SOT78 Type number
Plastic single-ended surface mounted package (D2-PAK); 3 leads (one lead SOT404 cropped)
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 19.1 A; tp = 0.1 ms; VDD ≤ 150 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Min −55 −55 Max 150 150 ±20 45.1 31.9 90.2 230 +175 +175 45.1 90.2 180 Unit V V V A A A W °C °C A A mJ
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
9397 750 14012
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 8 November 2004
2 of 13
Philips Semiconductors
PHP/PHB45NQ15T
www.DataSheet4U.com
N-channel TrenchMOS™ standard level FET
120 Pder (%) 80
03aa16
120 Ider (%) 80
03aa24
40
40
0 0 50 100 150 Tmb (°C) 200
0
0
50
100
150
200 Tmb (°C)
P tot P der = ---------------------- × 100 % P °
tot ( 25 C )
ID I der = ------------------- × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
102
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
03ao18
tp = 10 µ s
ID (A) Limit RDSon = VDS / ID 100 µ s
10 DC 1 ms
10 ms 1 1 10
102
VDS (V)
103
Tmb = 25 °C; IDM is single pulse; VGS = 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 14012
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 8 November 2004
3 of 13
Philips Semiconductors
PHP/PHB45NQ15T
www.DataSheet4U.com
N-channel TrenchMOS™ standard level FET
5. Thermal characteristics
Table 4: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions Min Typ 60 50 Max 0.65 Unit K/W K/W K/W thermal resistance from junction to mounting base Figure 4 thermal resistance from junction to ambient SOT78 SOT404 vertical in free air mounted on a printed-circuit board; minimum footprint; vertical in still air Symbol Parameter
5.1 Transient thermal impedance
03ao17
10 Zth(j-mb) (K/W) 1 δ = 0.5 10-1 0.2 0.1 0.05 0.02 10-2 single pulse
tp T P
δ=
tp T
t
10-3 10-5
10-4
10-3
10-2
10-1 tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 14012
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 8 November 2004
4 of 13
Philips Semiconductors
PHP/PHB45NQ15T
www.DataSheet4U.com
N-channel TrenchMOS™ standard level FET
6. Characteristics
Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 °C Tj = 175 °C Tj = −55 °C IDSS drain-source leakage current VDS = 120 V; VGS = 0 V Tj = 25 °C Tj = 175 °C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = ±20 V; VDS = 0 V VGS = 10 V; ID = 20 A; Figure 6 and 8 Tj = 25 °C Tj = 175 °C Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain (Miller) charge i.