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K4S643233F-SDI Dataheets PDF



Part Number K4S643233F-SDI
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
Datasheet K4S643233F-SDI DatasheetK4S643233F-SDI Datasheet (PDF)

www.DataSheet4U.com K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.5 December 2002 Rev. 1.5 Dec. 2002 www.DataSheet4U.com K4S643233F-S(D)E/N/I/P 512K x 32Bit x 4 Banks SDRAM FEATURES • • • • 3.0V & 3.3 power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All in.

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www.DataSheet4U.com K4S643233F-S(D)E/N/I/P CMOS SDRAM 2Mx32 Mobile SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.5 December 2002 Rev. 1.5 Dec. 2002 www.DataSheet4U.com K4S643233F-S(D)E/N/I/P 512K x 32Bit x 4 Banks SDRAM FEATURES • • • • 3.0V & 3.3 power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled at the positive going edge of the system clock . Burst read single-bit write operation. DQM for masking. Auto & self refresh. 64ms refresh period (4K cycle). Extended temperature operation (-25°C to 85 °C). Industrial temperature operation ( -40° C to 85° C). 90balls FBGA(-SXXX -Pb, -DXXX -Pb Free). CMOS SDRAM GENERAL DESCRIPTION The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. • • • • • • • ORDERING INFORMATION Part No. K4S643233F-SE/N/I/P75 K4S643233FSE/N/I/P1H K4S643233F-SE/N/I/P1L K4S643233F-DE/N/I/P75 K4S643233F-DE/N/I/P1H K4S643233F-DE/N/I/P1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=2) 105MHz(CL=3)*1 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=2) 105MHz(CL=3)*1 LVCMOS 90FBGA Pb Free Interface Package 90FBGA Pb FUNCTIONAL BLOCK DIAGRAM -S(D)E/N ; Normal/Low Power, Temp : -25 °C ~ 85 °C. -S(D)I/P ; Normal/Low Power, Temp : -40° C ~ 85 °C. Note : 1. In case of 40MHz Frequency, CL1 can be supported. I/O Control LWE Data Input Register LDQM Bank Select 512K x 32 512K x 32 512K x 32 512K x 32 Refresh Counter Output Buffer Row Decoder Sense AMP Row Buffer DQi Address Register CLK ADD Column Decoder Col. Buffer LRAS LCBR Latency & Burst Length LCKE LRAS LCBR LWE LCAS Programming Register LWCBR LDQM Timing Register CLK CKE CS RAS CAS WE DQM *Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 Dec. 2002 www.DataSheet4U.com K4S643233F-S(D)E/N/I/P 90-Ball FBGA Package Dimension and Pin Configuration < Bottom View*1 > E1 9 A e B C D D E F G D1 H J K D/2 L M N P R E E/2 8 7 6 5 4 3 2 1 CMOS SDRAM < Top View*2 > 90Ball(6x15) CSP 1 A B C D E F G H J K L M N P R DQ26 DQ28 VSSQ VSSQ V DDQ V SS A4 A7 CLK DQM1 V DDQ VSSQ VSSQ DQ11 DQ13 2 DQ24 V DDQ DQ27 DQ29 DQ31 DQM3 A5 A8 CKE NC DQ8 DQ10 DQ12 V DDQ DQ15 3 V SS VSSQ DQ25 DQ30 NC A3 A6 NC A9 NC V SS DQ9 DQ14 VSSQ V SS 7 VD D V DDQ DQ22 DQ17 NC A2 A10 NC BA0 CAS VD D DQ6 DQ1 V DDQ VD D 8 DQ23 V SSQ DQ20 DQ18 DQ16 DQM2 A0 BA1 CS WE DQ7 DQ5 DQ3 V SSQ DQ0 9 DQ21 DQ19 VDDQ VDDQ V SSQ VD D A1 NC RAS DQM0 V SSQ VDDQ VDDQ DQ4 DQ2 *2: Top View Pin Name CLK CS CKE A A1 Pin Function System Clock Chip Select Clock Enable Address Bank Select Address Row Address Strobe Column Address Strobe Write Enable Data Input/Output Mask Data Input/Output Power Supply/Ground Data Output Power/Ground [Unit:mm] A 0 ~ A10 BA0 ~ BA 1 RAS CAS WE DQM 0 ~ DQM 3 DQ 0 ~ 31 V DD /VSS V DDQ /VSSQ Substrate(4Layer) b z *1: Bottom View < Top View*2 > #A1 Ball Origin Indicator K4S643233F-XXXX SAMSUNG Week Symbol A A1 E E1 D D1 e b z Min 0.30 0.40 - Typ 1.30 0.35 11.00 6.40 13.00 11.20 0.80 0.45 - Max 1.40 0.40 0.50 0.10 Rev. 1.5 Dec. 2002 www.DataSheet4U.com K4S643233F-S(D)E/N/I/P ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V D D supply relative to Vss Storage temperature Power dissipation Short circuit current Symbol V I N, VOUT VDD , V DDQ TSTG PD IOS Value -1.0 ~ 4.6 -1.0 ~ 4.6 -55 ~ +150 1 50 CMOS SDRAM Unit V V °C W mA Notes : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. DC OPERATING CONDITIONS Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 °C to 85 ° C for Extended, -40° C to 85 °C for Industrial) Parameter Supply voltage Input logic high voltage Input logic low voltage Output logic high voltage Output logic low voltage Input leakage current Symbol VD D V DDQ VI H VIL VO H V OL ILI Min 2.7 2.7 2.2 -0.3 2.4 -10 Typ 3.0 3.0 3.0 0 Max 3.6 3.6 V DDQ +0.3 0.5 0.4 10 Unit V V V V V V uA 1 2 I O H = -2mA IOL = 2mA 3 Note Notes : 1. VIH (max) = 5.3V AC. The overshoot voltage duration is ≤ 3ns. 2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns. 3. Any input 0V ≤ V IN ≤ VDDQ . Input leakage currents include HI-Z output leakage for all bi-directional buffers with .


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