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IXTH6N120

IXYS Corporation
Part Number IXTH6N120
Manufacturer IXYS Corporation
Description High Voltage Power MOSFET
Published Mar 21, 2010
Detailed Description www.DataSheet4U.com High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet IXTH 6...
Datasheet PDF File IXTH6N120 PDF File

IXTH6N120
IXTH6N120

Overview
www.
DataSheet4U.
com High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet IXTH 6N120 IXTT 6N120 VDSS ID25 RDS(on) = 1200 V = 6A = 2.
6 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 6 24 6 25 500 5 300 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ mJ V/ns W °C °C °C °C g g TO-247 AD (IXTH) (TAB) TO-268 (IXTT) Case Style G G = Gate S = Sourc...


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