Document
PolarTM Power MOSFET
IXTT69N30P IXTQ69N30P
VDSS = 300V
ID25 = 69A ≤ RDS(on) 49mΩ
N-Channel Enhancement Mode Avalanche Rated
TO-268 (IXTT)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS < IDM, VDD < VDSS, TJ < 150°C TC = 25°C
1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-3P) TO-268 TO-3P
Maximum Ratings
300
V
300
V
± 20
V
± 30
V
69
A
200
A
69
A
1.5
J
15
V/ns
500
W
-55 to +150
°C
+150
°C
-55 to +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
4.0
g
5.5
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values Min. Typ. Max.
300
V
2.5
5.0 V
±100 nA
5 μA 100 μA
49 mΩ
G S Tab
TO-3P (IXTQ)
G D
S Tab
G = Gate
D = Drain
S = Source Tab = Drain
Features
z International Standard Packages z Fast Intrinsic Diode z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance
Advantages
z High Power Density z Easy to Mount z Space Savings
Applications
z DC-DC Coverters z Battery Chargers z Switch-Mode and Resonant-Mode
Power Supplies z DC Choppers z AC and DC Motor Drives z Uninterrupted Power Supplies z High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS99078F(10/09)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = ID25 RG = 4Ω (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC RthCS
TO-3P
Characteristic Values Min. Typ. Max.
30
48
S
4960
nF
760
pF
190
pF
25
ns
25
ns
75
ns
27
ns
156 180 nC
32
nC
79
nC
0.25 °C/W
0.21
°C/W
IXTQ69N30P IXTT69N30P
TO-3P (IXTQ) Outline
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 25A, -di/dt = 100A/μs,
QRM
VR = 100V, VGS = 0V
Characteristic Values Min. Typ. Max.
69 A
270 A
1.5 V
330
ns
4.13
μC
TO-268 (IXTT) Outline
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
ID - Amperes
ID - Amperes
IXTQ69N30P IXTT69N30P
Fig. 1. Output Characteristics @ TJ = 25ºC
70 VGS = 10V 8V
60
50 7V
40
30
6V
20
10
0 0
5V
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
70
VGS = 10V
60
8V
7V
50
6V 40
30
20 5V
10
0
0
1
2
3
4
5
6
7
8
9
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 34.5A Value vs. Drain Current
4.0
VGS = 10V 3.5
TJ = 125ºC
3.0
2.5
2.0
1.5 TJ = 25ºC
1.0
0.5
0
20
40
60
80
100 120 140 160 180
ID - Amperes
ID - Amperes
RDS(on) - Normalized
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
180
VGS = 10V
160
9V
140
8V
120
100 7V
80
60
6V 40
20
5V
0
0
2
4
6
8
10 12 14
16 18 20
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 34.5A Value vs. Junction Temperature
3.4
3.0
VGS = 10V
2.6
2.2
I D = 69A
1.8 I D = 34.5A
1.4
1.0
0.6
0.2
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs. Case Temperature
80
70
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
RDS(on) - Normalized
© 2009 IXYS CORPORATION, All Rights Reserved
IXTQ69N30P IXTT69N30P
ID - Amperes
Fig. 7. Input Admittance
90
80
70
60
50
TJ = 125ºC
40
25ºC
- 40ºC
30
20
10
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
VGS - Volts
g f s - Siemens
Fig. 8. Transconductance
80
70
TJ = - 40ºC
60
25ºC 50
40
125ºC
30
20
10
0
0
10
20
30
40
50
60
70
80
90
ID - Amperes
IS - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
200
180
160
140
120
100
80
60
TJ = 125ºC
40 TJ = 25ºC
20
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
VSD - Volts
VGS - Volts
10
9
VDS = 150V
I D = 34.5A 8
I G = 10mA
7
Fig. 10. Gate Charge
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
QG - NanoCoulombs
10,000
Fig. 11. Capacitance
1,000.0
Fig. 12. Forw.