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IXTQ69N30P Dataheets PDF



Part Number IXTQ69N30P
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXTQ69N30P DatasheetIXTQ69N30P Datasheet (PDF)

PolarTM Power MOSFET IXTT69N30P IXTQ69N30P VDSS = 300V ID25 = 69A ≤ RDS(on) 49mΩ N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS < IDM, VDD < VDSS, TJ < 150°C TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-3.

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PolarTM Power MOSFET IXTT69N30P IXTQ69N30P VDSS = 300V ID25 = 69A ≤ RDS(on) 49mΩ N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS < IDM, VDD < VDSS, TJ < 150°C TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-3P) TO-268 TO-3P Maximum Ratings 300 V 300 V ± 20 V ± 30 V 69 A 200 A 69 A 1.5 J 15 V/ns 500 W -55 to +150 °C +150 °C -55 to +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4.0 g 5.5 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 300 V 2.5 5.0 V ±100 nA 5 μA 100 μA 49 mΩ G S Tab TO-3P (IXTQ) G D S Tab G = Gate D = Drain S = Source Tab = Drain Features z International Standard Packages z Fast Intrinsic Diode z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z DC-DC Coverters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC and DC Motor Drives z Uninterrupted Power Supplies z High Speed Power Switching Applications © 2009 IXYS CORPORATION, All Rights Reserved DS99078F(10/09) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = ID25 RG = 4Ω (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RthJC RthCS TO-3P Characteristic Values Min. Typ. Max. 30 48 S 4960 nF 760 pF 190 pF 25 ns 25 ns 75 ns 27 ns 156 180 nC 32 nC 79 nC 0.25 °C/W 0.21 °C/W IXTQ69N30P IXTT69N30P TO-3P (IXTQ) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IF = 25A, -di/dt = 100A/μs, QRM VR = 100V, VGS = 0V Characteristic Values Min. Typ. Max. 69 A 270 A 1.5 V 330 ns 4.13 μC TO-268 (IXTT) Outline Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,850,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 ID - Amperes ID - Amperes IXTQ69N30P IXTT69N30P Fig. 1. Output Characteristics @ TJ = 25ºC 70 VGS = 10V 8V 60 50 7V 40 30 6V 20 10 0 0 5V 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC 70 VGS = 10V 60 8V 7V 50 6V 40 30 20 5V 10 0 0 1 2 3 4 5 6 7 8 9 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 34.5A Value vs. Drain Current 4.0 VGS = 10V 3.5 TJ = 125ºC 3.0 2.5 2.0 1.5 TJ = 25ºC 1.0 0.5 0 20 40 60 80 100 120 140 160 180 ID - Amperes ID - Amperes RDS(on) - Normalized ID - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC 180 VGS = 10V 160 9V 140 8V 120 100 7V 80 60 6V 40 20 5V 0 0 2 4 6 8 10 12 14 16 18 20 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 34.5A Value vs. Junction Temperature 3.4 3.0 VGS = 10V 2.6 2.2 I D = 69A 1.8 I D = 34.5A 1.4 1.0 0.6 0.2 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 80 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade RDS(on) - Normalized © 2009 IXYS CORPORATION, All Rights Reserved IXTQ69N30P IXTT69N30P ID - Amperes Fig. 7. Input Admittance 90 80 70 60 50 TJ = 125ºC 40 25ºC - 40ºC 30 20 10 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGS - Volts g f s - Siemens Fig. 8. Transconductance 80 70 TJ = - 40ºC 60 25ºC 50 40 125ºC 30 20 10 0 0 10 20 30 40 50 60 70 80 90 ID - Amperes IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 180 160 140 120 100 80 60 TJ = 125ºC 40 TJ = 25ºC 20 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts VGS - Volts 10 9 VDS = 150V I D = 34.5A 8 I G = 10mA 7 Fig. 10. Gate Charge 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 QG - NanoCoulombs 10,000 Fig. 11. Capacitance 1,000.0 Fig. 12. Forw.


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