NTHD3102C

NTHD3102C MOSFET – Power, Complementary, ChipFET 20 V, +5.5 A /-4.2 A Features Complementary N−Channel and P−Channel MOSFET Small Size, 40% Smaller than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response This is a Pb−Free Device Applications DC−DC Conversion Circuits Load/Power Switching Single or Dual Cell Li−Ion Battery Supplied Devices Ideal for Power Management Applications in Portable, Battery Powered Products http://onsemi.com V(BR)DSS N−Channel 20 V P−Channel −20 V RDS(on) TYP 29 mW @ 4.5 V 37 mW @ 2.5 V 48 mW @ 1.8 V 64 mW @ 4.5 V 83 mW @ 2.5 V 105 mW @ 1.8 V ID MAX (Note 1) 5.5 A −4.2 A D 1 S2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage N−Ch P−Ch N−Channel Continuous Drain Current (Note 1) P−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t≤5s Steady State t≤5s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID ID PD 20 "8.0 "8.0 4.0 2.9 5.5 3.1 2.2 4.2 1.1 V V A A W t≤5s 2.1 Gate−to−Source ESD Rating − (Human Body Model, Method 3015) ESD 100 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to s...