Intel StrataFlash Embedded Memory
Intel StrataFlash® Embedded Memory (P30)
1-Gbit P30 Family
Datasheet
Product Features
■ High performance
■ Security
—...
Description
Intel StrataFlash® Embedded Memory (P30)
1-Gbit P30 Family
Datasheet
Product Features
■ High performance
■ Security
— 85/88 ns initial access
— One-Time Programmable Registers:
— 40 MHz with zero wait states, 20 ns clock-todata output synchronous-burst read mode
64 unique factory device identifier bits 64 user-programmable OTP bits
— 25 ns asynchronous-page read mode
Additional 2048 user-programmable OTP bits
— 4-, 8-, 16-, and continuous-word burst mode
— Selectable OTP Space in Main Array:
— Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
— 1.8 V buffered programming at 7 µs/byte (Typ)
— Absolute write protection: VPP = VSS
■ Architecture
— Multi-Level Cell Technology: Highest Density at Lowest Cost
— Power-transition erase/program lockout — Individual zero-latency block locking — Individual block lock-down
— Asymmetrically-blocked architecture
■ Software
— Four 32-KByte parameter blocks: top or
— 20 µs (Typ) program suspend
bottom configuration
— 20 µs (Typ) erase suspend
— 128-KByte main blocks
— Intel® Flash Data Integrator optimized
■ Voltage and Power
— VCC (core) voltage: 1.7 V – 2.0 V — VCCQ (I/O) voltage: 1.7 V – 3.6 V — Standby current: 55 µA (Typ) for 256-Mbit
— Basic Command Set and Extended Command Set compatible
— Common Flash Interface capable
■ Density and Packaging
— 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
— 64/128/25...
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