Small Signal MOSFET
NTZD3156C Small Signal MOSFET
20 V, 540 mA / −20 V, −430 mA Complementary N− and P−Channel MOSFETs with Integrated Pull ...
Description
NTZD3156C Small Signal MOSFET
20 V, 540 mA / −20 V, −430 mA Complementary N− and P−Channel MOSFETs with Integrated Pull Up/Down Resistor and ESD Protection
Features
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ID Max (Note 1) 540 mA
Leading Trench Technology for Low RDS(on) Performance High Efficiency System Performance Low Threshold Voltage Integrated G−S Resistor on Both Devices ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices
V(BR)DSS N−Channel 20 V
RDS(on) Max 0.55 W @ 4.5 V 0.7 W @ 2.5 V 0.9 W @ 1.8 V 0.9 W @ −4.5 V 1.2 W @ −2.5 V 2.0 W @ −1.8 V
P−Channel −20 V
−430 mA
Applications
Load/Power Switching with Level Shift Portable Electronic Products such as GPS, Cell Phones, DSC, PMP,
Bluetooth Accessories
S1
PINOUT: SOT−563
1 6 D1
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Continuous Drain Current (Note 1) P−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State tv5s Steady State tv5s Steady State tv5s N−Channel P−Channel tp = 10 ms IDM TJ, TSTG IS TL TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD 280 1500 −750 −55 to 150 350 260 mA °C mA °C ID Symbol VDSS VGS Value 20 ±6 540 390 570 −430 −310 −455 250 mW mA 6 1 SOT−563−6 CASE 463A STYLE 9 ZC M G Unit V V D2 3 Top View 4 S2 G1 2 5 G2
MARKING DIAGRAM
ZC M G G
= Specific Device Code = Date Code = Pb−Free Package
(Note: Micr...
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