VMM90-09F

Advanced Technical Information www.DataSheet4U.com Dual Power HiPerFETTM Module Phaseleg Configuration VMM 90-09F VDSS ID25 RDS(on) = 900 V = 85 A = 76 mW MOSFET T1 + T2 Symbol VDSS VGS ID25 ID80 IF25 IF80 TC = 25°C TC = 80°C (diode) TC = 25°C (diode) TC = 80°C Conditions TVJ = 25°C to 150°C Maximum Ratings 900 ±20 85 65 85 65 V V A A A A Features HiPerFET TM technology – low RDSon – unclamped inductive switching (UIS) capability – dv/dt ruggedness – fast intrinsic reverse diode – low gate charge thermistor for internal temperature measurement package – low inductive current path – screw connection to high current main terminals – use of non interchangeable connectors for auxiliary terminals possible – Kelvin source terminals for easy drive – isolated DCB ceramic base plate Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 76 mW 3 1.5 1 960 225 430 150 180 330 140 1.1 250 0.12 1.6 5 0.4 V mA mA µA nC nC nC ns ns ns ns V ns 0.08 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF trr RthJC RthJS VGS = 10 V; ID = ID80 VDS = 20 V; ID = 30 mA VDS = 0.8 VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 450 V; ID = 50 A Applications converters with high power density and high switching speed for – power supplies – induction heating VGS= 10 V; VDS = 0.5 VDSS; ID = ID80; RG = 0.47 W (diode) IF = 90 A; VGS = 0 V (diode) IF = 90 A; -di/dt = 400 A/µs; VDS = 100 V with heat tr...