VEC2301

Ordering number : ENN7647 VEC2301 P-Channel Silicon MOSFET www.DataSheet4U.com VEC2301 General-Purpose Switching Device Applications Preliminary Features Package Dimensions unit : mm 2227 [VEC2301] Top View 0.25 0.3 0.15 Bottom View 0.07 Best suited for load switches. Low ON-resistance. 2.5V drive. Composite type, facilitating high-density mounting. Mount height 0.75mm 8 7 6 5 2.8 2.3 0.25 1 2 2.9 3 0.65 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --20 ±10 --3 --12 0.9 1.0 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=±8V, VDS=0 Ratings min --20 --1 ±10 typ max Unit V µA µA Marking : BA 0.75 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such ...