DatasheetsPDF.com

BUK9215-55A Dataheets PDF



Part Number BUK9215-55A
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description TrenchMOS logic level FET
Datasheet BUK9215-55A DatasheetBUK9215-55A Datasheet (PDF)

BUK9215-55A TrenchMOS™ logic level FET Rev. 01 — 16 August 2001 M3D300 www.DataSheet4U.com Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9215-55A in SOT428 (D-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V .

  BUK9215-55A   BUK9215-55A



Document
BUK9215-55A TrenchMOS™ logic level FET Rev. 01 — 16 August 2001 M3D300 www.DataSheet4U.com Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9215-55A in SOT428 (D-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d) 1 Top view g s mb d Simplified outline Symbol MBB076 2 3 MBK091 SOT428 (D-PAK) 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors BUK9215-55A www.DataSheet4U.com TrenchMOS™ logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 25 A Tj = 25 °C; VGS = 4.5 V; ID = 25 A Tj = 25 °C; VGS = 10 V; ID = 25 A [1] Symbol Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Typ 13 11 Max 55 62 115 175 15 16.6 13.6 Unit V A W °C mΩ mΩ mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM WDSS peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) pulsed reverse drain current non-repetitive avalanche energy Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 62 A; VDS ≤ 55 V; VGS = 5 V; RGS = 50 Ω; starting Tj = 25 °C [1] [2] [1] [2] [1] Conditions RGS = 20 kΩ Min −55 −55 - Max 55 55 ±15 62 55 44 248 115 +175 +175 62 55 248 211 Unit V V V A A A A W °C °C A A A mJ Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Source-drain diode Avalanche ruggedness [1] [2] Current is limited by power dissipation chip rating Continuous current is limited by bond wires 9397 750 08633 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 — 16 August 2001 2 of 12 Philips Semiconductors BUK9215-55A www.DataSheet4U.com TrenchMOS™ logic level FET 03aa16 120 Pder (%) 100 80 ID (A) 60 03nf79 Capped at 55 A due to limitation of bondwires 80 60 40 40 20 20 0 0 50 100 150 Tmb (ºC) 0 200 25 50 75 100 125 150 175 200 Tmb (ºC) P tot P der = ---------------------- × 100 % P ° tot ( 25 C ) VGS ≥ 4.5 V. ID I der = ------------------- × 100 % I ° D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 103 03nf78 ID (A) RDSon = VDS / ID 102 tp = 10 µs 100 µs 10 P δ= tp T DC 1 ms 10 ms 100 ms tp T 1 1 t 10 VDS (V) 102 Tmb = 25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 08633 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 — 16 August 2001 3 of 12 Philips Semiconductors BUK9215-55A www.DataSheet4U.com TrenchMOS™ logic level FET 7. Thermal characteristics Table 4: Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to mounting Figure 4 base Conditions Value 71.4 1.3 Unit K/W K/W 7.1 Transient thermal impedance 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 10-1 0.1 0.05 0.02 10-2 Single Shot tp T P 03nf77 δ= tp T t 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 08633 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 — 16 August 2001 4 of 12 Philips Semiconductors BUK9215-55A www.DataSheet4U.com TrenchMOS™ logic level FET 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V; Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C Tj = 175 °C Tj = −55 °C IDSS drain-source leakage current VDS = 55 V; VGS = 0 V; Tj = 25 °C Tj = 175 °C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = ±10 V; VDS = 0 V VGS = 5 V; ID = 25 A Figure 7 and 8 Tj = 25 °C Tj = 175 °C VGS = 4.5 V; ID = 25 A; VGS = 10 V; ID =25 A; Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) t.


SS0203EJ BUK9215-55A BUK92150-55A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)