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SBFP420D Dataheets PDF



Part Number SBFP420D
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description UHF to C Band Low Noise Amplifier Oscillation Applications
Datasheet SBFP420D DatasheetSBFP420D Datasheet (PDF)

Ordering number : ENN7435 SBFP420D NPN Epitaxial Planar Silicon Transistor www.DataSheet4U.com SBFP420D UHF to C Band Low Noise Amplifier, Oscillation Applications Features • • Package Dimensions • • • Low noise : NF=1.1dB typ (f=1.8GHz). unit : mm High cut-off frequency : fT=20GHz typ (VCE=1V). 2215 : fT=25GHz typ (VCE=3V). Low voltage operation. High Gain : S21e2=17dB typ (f=1.8GHz). 0.2 0.05 Ultrasmall (1008 size), thin (0.6mm) leadless package. 3 0.05 [SBFP420D] 0.5 0.3 0.05 0.6 0.2.

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Ordering number : ENN7435 SBFP420D NPN Epitaxial Planar Silicon Transistor www.DataSheet4U.com SBFP420D UHF to C Band Low Noise Amplifier, Oscillation Applications Features • • Package Dimensions • • • Low noise : NF=1.1dB typ (f=1.8GHz). unit : mm High cut-off frequency : fT=20GHz typ (VCE=1V). 2215 : fT=25GHz typ (VCE=3V). Low voltage operation. High Gain : S21e2=17dB typ (f=1.8GHz). 0.2 0.05 Ultrasmall (1008 size), thin (0.6mm) leadless package. 3 0.05 [SBFP420D] 0.5 0.3 0.05 0.6 0.2 4 2 1 0.3 (Bottom View) 0.05 1 : Base 2 : Emitter 3 : Collector 4 : Emitter SANYO : ECSP1008-4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 0.8 0.6 Ratings 15 4.5 1.5 35 100 150 --55 to +150 1.0 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT1 fT2 Cre 2 S21e 1 2 S21e 2 Conditions VCB=5V, IE=0 VEB=1.5V, IC=0 VCE=4V, IC=20mA VCE=1V, IC=10mA VCE=3V, IC=30mA VCB=1V, f=1MHz VCE=1V, IC=10mA, f=1.8GHz VCE=2V, IC=20mA, f=1.8GHz VCE=2V, IC=5mA, f=1.8GHz Ratings min typ max 200 35 50 20 18 25 0.17 16 14 17 1.1 1.5 0.27 150 Unit nA µA GHz GHz pF dB dB dB NF Marking : AD Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62503 TS IM TA-100130 No.7435-1/12 SBFP420D www.DataSheet4U.com Electrical Connection (Top view) Polarity mark (Top) Base Emitter *Electrodes : Bottom Emitter Collector Polarity mark Emitter Collector Base Emitter 10 IC -- VCE 100µA 90µA 80µA 70µA 60µA 35 IC -- VBE VCE=3V 0 0.2 0.4 0.6 0.8 30 Collector Current, IC -- mA Collector Current, IC -- mA 8 25 6 20 4 50µA 40µA 30µA 20µA 15 10 2 IB=10µA 0 0 1 2 3 4 5 IT05719 5 0 1.0 IT05720 Collector-to-Emitter Voltage, VCE -- V 1000 7 Base-to-Emitter Voltage, VBE -- V 1.0 hFE -- IC Cob -- VCB f=1MHz DC Current Gain, hFE 3 2 Output Capacitance, Cob -- pF 5 7 5 100 7 5 3 2 VCE=4V 1V 3 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.1 Collector Current, IC -- mA 1.0 5 7 100 IT05721 100 0.1 2 3 5 7 1.0 2 3 5 7 1V 10 Cre -- VCB Collector-to-Base Voltage, VCB -- V IT05723 f T -- IC f=1MHz Reverse Transfer Capacitance, Cre -- pF Gain-Bandwidth Product, f T -- GHz 7 7 5 3 2 5 VCE=3V 1V 3 10 7 5 3 2 2 0.1 0.1 2 3 5 7 1.0 2 3 5 Collector-to-Base Voltage, VCB -- V 10 IT05724 7 1.0 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 100 IT05722 No.7435-2/12 SBFP420D 20 2 Forward Transfer Gain, S21e -- dB S21e2 -- IC V V CE=3 Noise Figure, NF -- dB www.DataSheet4U.com 3.5 NF -- IC VCE=3V f=1.8GHz 3.0 15 1V 2.5 2.0 10 1.5 50Ω Zs= sopt Zs=Z 5 1.0 0.5 0 1.0 0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 3.5 100 IT05725 25 7 0 5 10 15 20 25 30 35 40 Collector Current, IC -- mA IT05726 NF -- IC VCE=1V f=1.8GHz Output Level, Pout -- dBm Pin -- Pout f=1.8GHz VCE=3V IC=20mA 20 15 10 5 0 --5 --10 --15 --20 3.0 Noise Figure, NF -- dB 2.5 2.0 1.5 50Ω Zs= sopt Zs=Z Zs s =Z op t = Zs 50 Ω 1.0 0.5 0 0 5 10 15 20 25 30 35 40 --25 --45 --40 --35 --30 --25 --20 --15 --10 --5 0 5 10 Collector Current, IC -- mA 120 IT05727 Input Level, Pin -- dBm IT05728 PC -- Ta Collector Dissipation, PC -- mW 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT05729 No.7435-3/12 SBFP420D www.DataSheet4U.com S Parameters (Common emitter) VCE=1V, IC=1mA, ZO=50Ω Freq(MHz) S11 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 6000 0.965 0.955 0.932 0.903 0.888 0.843 0.811 0.811 0.777 0.760 0.733 0.725 0.711 0.692 0.684 0.665 0.661 0.653 0.644 0.642 0.633 0.629 0.628 0.623 0.622 0.618 0.616 0.615 0.612 0.613 ∠S11 --11.9 --22.6 --35.0 --46.4 --55.1 --69.4 --80.1 --86.4 --96.


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