Document
Ordering number : ENN7748
CPH3322
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CPH3322
Features
• • •
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --60 ±20 --0.6 --2.4 0.9 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID= --1mA, VGS=0 VDS= --60V, VGS=0 VGS= ±16V, VDS=0 VDS= --10V, ID= --1mA VDS= --10V, ID= --300mA ID= --0.3A, VGS= --10V ID= --0.3A, VGS= --4V VDS= --20V, f=1MHz VDS= --20V, f=1MHz VDS= --20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --60 --1 ±10 --1.2 0.46 0.67 1.3 1.6 73 7 4 6 3.5 12.5 3 1.7 2.3 --2.6 typ max Unit V
µA µA
V S Ω Ω pF pF pF ns ns ns ns
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13004 TS IM TA-100223 No.7748-1/4
CPH3322
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS= --30V, VGS= --10V, ID= --0.6A VDS= --30V, VGS= --10V, ID= --0.6A VDS= --30V, VGS= --10V, ID= --0.6A IS= --0.6A, VGS=0 min
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Ratings typ 2.6 0.4 0.4 --0.88 --1.2 max Unit nC nC nC V
Marking : JX
Package Dimensions unit : mm 2152A
Switching Time Test Circuit
VIN 0V --10V 0.4
0.6 0.2
VDD= --30V
2.9
0.15
VIN PW=10µs D.C.≤1%
ID= --300mA RL=100Ω
3
D
VOUT
0.05
1.6 2.8
G
1
1.9
2
0.6
1 : Gate 2 : Source 3 : Drain SANYO : CPH3
CPH3322 P.G 50Ω
0.7 0.9
0.2
S
.0V
--0.6
ID -- VDS
V --4.0 V
0V --10
--1.0
ID -- VGS
VDS= --10V
--0.5
--6.
--3
.5
--0.8
Drain Current, ID -- A
--0.4
0 --3.
V
Drain Current, ID -- A
--0.6
--0.3
--0.4
--0.2
--0.1
--0.2
0 0 --0.25 --0.50 --0.75 --1.00 --1.25 --1.50 --1.75 --2.00
0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Drain-to-Source Voltage, VDS -- V
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 --2 --4 --6 --8 --10 --12 --14 --16
IT03941 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --60
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
Ta= 7
VGS= --2.5V
5°C 25° --2 5°C C
IT03942
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
Ta=25°C ID= --0.3A
4V = -S V G V --10 A, 0.3 S= VG I D= -0.3A, I D=
--18
--20
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
IT07108
Ambient Temperature, Ta -- °C
IT07109
No.7748-2/4
CPH3322
Forward Transfer Admittance, yfs -- mS
10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 --0.01 2 3 5 7 2 3 5 7
yfs -- ID
VDS= --10V
--1.0 7 5
IF -- Vwww.DataSheet4U.com SD
VGS=0
Forward Current, IF -- A
25°C
25°C Ta= -75°C
3 2
Ta= 75°C
25°C
--0.1 7 5 3 2
--0.1
Drain Current, ID -- A
100 7
--1.0 IT03945
--0.01 --0.4
--0.5
--0.6
--0.7
--0.8
--25°C
--0.9
--1.0
--1.1
--1.2
SW Time -- ID
100
Ciss, Coss, Crss -- VDS
Ciss
Diode Forward Voltage, VSD -- V
IT03946
Switching Time, SW Time -- ns
5 3 2
VDD= --30V VGS= --10V Ciss, Coss, Crss -- pF
f=1MHz
7 5 3 2
tf
td(off)
10 7 5 3 2
10 7 5 3 2
td(on)
Coss
tr
Crss
1.0 3 5 7 --0.1 2 3 5 7 --1.0 2 IT03947
1.0 0 --10 --20 --30 --40 --50 --60 IT03948
Drain Current, ID -- A
--10 --9
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
5 3 2
A S O
Gate-to-Source Voltage, VGS -- V
VDS= --30V ID= --0.6A Drain Current, ID -- A
.