STB434S

www.DataSheet4U.com STB/P434S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package. ID 60A R DS(ON) (m Ω) Max 9.2 @ VGS=10V 11.5 @ VGS=4.5V D D G S G D S G STP SERIES TO-220 STB SERIES TO-263(DD-PAK) S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 40 ±20 TC=25°C TC=70°C 60 48 176 91 TC=25°C TC=70°C 62.5 40 -55 to 150 Units V V A A A mJ W W °C Sigle Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a a 2 62.5 °C/W °C/W Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Nov,14,2008 1 www.samhop.com.tw www.DataSheet4U.com STB/P434S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 ±100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=32V , VGS=0V 40 VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS ...