MW7IC008NT1

Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 1, 9/2009 www.DataSheet4U.com RF LDMOS Wideband Integrated Power Amplifier The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical radio base station modulation formats. Driver Applications Typical CW Performance: VDD = 28 Volts, IDQ1 = 25 mA, IDQ2 = 75 mA Frequency 100 MHz @ 11 W CW 400 MHz @ 9 W CW 900 MHz @ 6.5 W CW Gps (dB) 23.5 22.5 23.5 PAE (%) 55 41 34 MW7IC008NT1 100 - 1000 MHz, 8 W PEAK, 28 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER Capable of Handling 10:1 VSWR, @ 32 Vdc, 900 MHz, Pout = 6.5 Watts CW (3 dB Input Overdrive from Rated Pout) Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 8 Watts CW Pout @ 900 MHz Typical Pout @ 1 dB Compression Point ] 11 Watts CW @ 100 MHz, 9 Watts CW @ 400 MHz, 6.5 Watts CW @ 900 MHz Features Broadband, Single Matching Network from 20 to 1000 MHz Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) Integrated ESD Protection 225°C Capable Plastic Package RoHS Compliant In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel. CASE 1894 - 01 PQFN 8x8 PLASTIC VTTS1 VTTS2 NC Quiescent Current Temperature Compensation (1) VGS1 RFinS1 VGS2 RFoutS2/VDS2 VGLS1 NC NC NC RFinS1 VGS1 24 23 22 21 20 19 1 2 3 4 5 6 RFoutS1/VDS1 RFinS2 NC...