Power MOSFET
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STF19NM65N-STI19NM65N-STW19NM65N STB19NM65N - STP19NM65N
N-channel 650 V - 0.25 Ω - 15.5 A - TO-220...
Description
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STF19NM65N-STI19NM65N-STW19NM65N STB19NM65N - STP19NM65N
N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET
Features
Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID
3
15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A
1
2
3 12
TO-220
3 1 2
I²PAK
TO-220FP
3 1
2 3
1. Limited only by maximum temperature allowed ■ ■ ■
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
D²PAK
1
TO-247
Figure 1.
Internal schematic diagram
Application
■
Switching applications
Description
This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
Table 1.
Device summary
Order codes STI19NM65N Marking 19NM65N 19NM65N 19NM65N 19NM65N 19NM65N Package I²PAK TO-220FP TO-220 D²PAK TO-247 Packaging Tube Tube Tube Tape and reel Tube
STF19NM65N STP19NM65N STB19NM65NT4 STW19NM65N
February 2008
Rev 1
1/19
www.st.com 19
Contents
www.DataSheet4U.com STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical char...
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