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STB19NM65N Dataheets PDF



Part Number STB19NM65N
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Power MOSFET
Datasheet STB19NM65N DatasheetSTB19NM65N Datasheet (PDF)

www.DataSheet4U.com STF19NM65N-STI19NM65N-STW19NM65N STB19NM65N - STP19NM65N N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET Features Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 3 15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A 1 2 3 12 TO-220 3 1 2 I²PAK TO-220FP 3 1 2 3 1. Limited only by maximum temperature allowed ■ ■ ■ 1.

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www.DataSheet4U.com STF19NM65N-STI19NM65N-STW19NM65N STB19NM65N - STP19NM65N N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET Features Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 3 15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A 1 2 3 12 TO-220 3 1 2 I²PAK TO-220FP 3 1 2 3 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D²PAK 1 TO-247 Figure 1. Internal schematic diagram Application ■ Switching applications Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Table 1. Device summary Order codes STI19NM65N Marking 19NM65N 19NM65N 19NM65N 19NM65N 19NM65N Package I²PAK TO-220FP TO-220 D²PAK TO-247 Packaging Tube Tube Tube Tape and reel Tube STF19NM65N STP19NM65N STB19NM65NT4 STW19NM65N February 2008 Rev 1 1/19 www.st.com 19 Contents www.DataSheet4U.com STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/19 STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N www.DataSheet4U.com Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter TO-220/I²PAK TO-220FP D²PAK/TO-247 650 ± 25 15.5 10 62 150 15 --55 to 150 150 2500 15.5(1) 10(1) 62(1) 35 Unit VDS VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tstg Tj Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Storage temperature Max. operating junction temperature V V A A A W V/ns V °C °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤15.5 A, di/dt ≤400 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Value Parameter.


STF19NM65N STB19NM65N STI19NM65N


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