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STF19NM65N-STI19NM65N-STW19NM65N STB19NM65N - STP19NM65N
N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET
Features
Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID
3
15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A
1
2
3 12
TO-220
3 1 2
I²PAK
TO-220FP
3 1
2 3
1. Limited only by maximum temperature allowed ■ ■ ■
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
D²PAK
1
TO-247
Figure 1.
Internal schematic diagram
Application
■
Switching applications
Description
This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
Table 1.
Device summary
Order codes STI19NM65N Marking 19NM65N 19NM65N 19NM65N 19NM65N 19NM65N Package I²PAK TO-220FP TO-220 D²PAK TO-247 Packaging Tube Tube Tube Tape and reel Tube
STF19NM65N STP19NM65N STB19NM65NT4 STW19NM65N
February 2008
Rev 1
1/19
www.st.com 19
Contents
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Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 4 5 6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/19
STB19NM65N-STI19NM65N-STF19NM65N-STP/W19NM65N
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Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value Parameter TO-220/I²PAK TO-220FP D²PAK/TO-247 650 ± 25 15.5 10 62 150 15 --55 to 150 150 2500 15.5(1) 10(1) 62(1) 35 Unit
VDS VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tstg Tj
Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Storage temperature Max. operating junction temperature
V V A A A W V/ns V °C °C
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤15.5 A, di/dt ≤400 A/µs, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Value Parameter.