ST13003D-K

www.DataSheet4U.com ST13003D-K High voltage fast-switching NPN power transistor Features ■ ■ ■ ■ ■ High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode 2 1 Applications ■ 3 SOT-32 Electronic ballast for fluorescent lighting Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications. Figure 1. Internal schematic diagram Table 1. Device summary Marking 13003D Package SOT-32 Packaging cardboard box Order code ST13003D-K November 2007 Rev 1 1/8 www.st.com 8 Electrical ratings www.DataSheet4U.com ST13003D-K 1 Electrical ratings Table 2. Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 0.75A, tp < 10µs) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value 700 400 V(BR)EBO 1.5 3 0.75 1.5 40 -55 to 150 150 Unit V V V A A A A W °C °C 2/8 ST13003D-K www.DataSheet4U.com Electrical characteristics 2 El...