STP11NM60ND

STP11NM60ND Datasheet N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in a TO-220 package Features TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STP11NM60ND 650 V 450 mΩ 10 A Fast-recovery body diode Low gate charge and input capacitance Low on-resistance RDS(on) 100% avalanche tested High dv/dt ruggedness Applications Switching applications G(1) Description S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using AM01475v1_noZen MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. Product status link STP11NM60ND Product summary Order code STP11NM60ND Marking 11NM60ND Package TO-220 Packing Tube DS14353 - Rev 1 - June 2023 For further information contact your local STMicroelectronics sales office. www.st.com STP11NM60ND Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Maximum operating junction temperature 1. Pulse width is limited by safe operating area. 2. ISD ≤ 10 A, di/...