MD7IC21100GNR1

Freescale Semiconductor Technical Data Document Number: MD7IC21100N Rev. 0, 10/2008 www.DataSheet4U.com RF LDMOS Wideband Integrated Power Amplifiers The MD7IC21100N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD - SCDMA. Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 190 mA, IDQ2A = IDQ2B = 925 mA, Pout = 32 Watts Avg., f = 2167.5 MHz, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 28.5 dB Power Added Efficiency — 30% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, Pout = 110 Watts CW (3 dB Input Overdrive from Rated Pout) Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 100 Watts CW Pout. Typical Pout @ 1 dB Compression Point ] 110 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S-Parameters On - Chip Matching (50 Ohm Input, on a per side basis, DC Blocked) Internally Matched for Ease of Use Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1) In...