CGD1040HI

CGD1040HI Rev. 01 — 22 September 2009 www.DataSheet4U.com 1 GHz, 20 dB gain GaAs high output power doubler Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. 1.2 Features I I I I I I I I I Excellent linearity Superior levels of ESD protection Extremely low noise Excellent return loss properties Gain compensation over temperature Rugged construction Unconditionally stable Thermally optimized design Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS) I Integrated ring wave surge protection 1.3 Applications I CATV systems operating in the 40 MHz to 1003 MHz frequency range 1.4 Quick reference data Table 1. Quick reference data Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 Ω; Tmb = 35 °C; unless otherwise specified. Symbol Parameter Gp CTB CCN Itot [1] [2] Conditions f = 50 MHz f = 1003 MHz Vo = 56.4 dBmV at 1003 MHz Vo = 56.4 dBmV at 1003 MHz [1] [1] [2] Min 57 - Typ 20 −74 63 440 Max Unit −64 460 dB dBc dBc mA power gain composite triple beat carrier-to-composite noise total current 19.5 20.8 22.0 dB 79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (−6 dB offset); tilt extrapolated to 13.5 dB at 1003 MHz. Direct Current (DC). NXP Semiconductors CGD1040HI www.DataSheet4U.com 1 GH...