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BFP740F
NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides o...
www.DataSheet4U.com
BFP740F
NPN Silicon Germanium RF
Transistor High gain ultra low noise RF
transistor Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more Ideal for CDMA and WLAN applications Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.75 dB at 6 GHz High maximum stable gain Gms = 27.5 dB at 1.8 GHz Gold metallization for extra high reliability 150 GHz fT-Silicon Germanium technology
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Top View
4 3
3 4 1
2
XYs
1 2
Direction of Unreeling
Type BFP740F
Maximum Ratings Parameter
Marking R7s 1=B
Pin Configuration 2=E 3=C 4=E
Symbol VCEO
Package TSFP-4
Value Unit
-
Collector-emitter voltage
TA > 0°C TA ≤ 0°C
V 4 3.5
Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1)
TS ≤ 90°C
VCES VCBO VEBO IC IB Ptot Tj TA T stg
13 13 1.2 30 3 160 150 -65 ... 150 -65 ... 150 mW °C mA
Junction temperature Ambient temperature Storage temperature
1T is measured on the collector lead at the soldering point to the pcb S
2005-11-08 1
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BFP740F
Thermal Resistance Parameter Symbol RthJS Value ≤ 370 Unit
Junction - soldering point1)
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter c...