SPB77N06S2-12

www.DataSheet4U.com SPP77N06S2-12 SPB77N06S2-12 OptiMOS® Power-Transistor Feature N-Channel Product Summary VDS R DS(on) ID P- TO263 -3-2 55 12 80 P- TO220 -3-1 V mΩ A Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated Type SPP77N06S2-12 SPB77N06S2-12 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6029 Q67060-S6030 Marking 2N0612 2N0612 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TC=25°C Value 80 56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 280 16 6 ±20 158 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=77A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 1) Reverse diode d v/dt IS=77A, V DS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 www.DataSheet4U.com SPP77N06S2-12 SPB77N06S2-12 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Symbol min. RthJC RthJA RthJA - Values typ. 0.63 max. 0.95 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(o...