TPC8121

TPC8121 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS V) TPC8121 Notebook PC Applications Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 8.0 mΩ (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg −30 V −30 V ±20 V −11 A −44 1.9 W 1.0 W 82 mJ −11 A 0.030 mJ 150 °C −55 to 150 °C JEDEC ⎯ JEITA ⎯ TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 8765 1234 Note: Note 1, Note 2, Note 3 and Note 4: See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/c...