TPC6105
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC6105
Notebook PC Applications Portabl...
TPC6105
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOS III)
TPC6105
Notebook PC Applications Portable Equipment Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current : IDSS = −10 μA (max) (VDS = −20 V) Enhancement mode : Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
(t = 5 s) (Note 2a)
Drain power dissipation
(t = 5 s) (Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP
PD
PD
EAS IAR EAR Tch Tstg
−20
V
−20
V
±8
V
−2.7 A
−10.8
2.2
W
0.7
W
1.2
mJ
−1.35
A
0.22
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Han...