TPC6105

TPC6105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6105 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current : IDSS = −10 μA (max) (VDS = −20 V) Enhancement mode : Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg −20 V −20 V ±8 V −2.7 A −10.8 2.2 W 0.7 W 1.2 mJ −1.35 A 0.22 mJ 150 °C −55~150 °C JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Han...