TPC6103

TPC6103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6103 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −12 V) Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 3) VDSS VDGR VGSS ID IDP PD PD EAS −12 V −12 V ±8 V −5.5 A −22 2.2 W 0.7 W 5.3 mJ JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) Avalanche current IAR Repetitive avalanche energy (Note 4) EAR Channel temperature Tch Storage temperature range Tstg −2.75 A 0.22 mJ 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“H...