TK40J60T

TK40J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) www.DataSheet4U.com TK40J60T Switching Regulator Applications 15.9max. Ф3.2±0.2 1.0 4.5 9.0 Unit: mm 3.3max. Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 40 80 400 576 40 40 150 -55~150 A W mJ A mJ °C °C Unit V V 1.8max. 0.6－0.1 ＋0.3 1.0 －0.25 ＋0.3 5.45±0.2 5.45±0.2 4.8max. 1 2 3 2.8 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range (Note 3) 1. Gate 2. Drain(heat sink) 3. Source JEDEC JEITA TOSHIBA ⎯ SC-65 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal res...