HYMD512M646BFS8-J

128Mx64 bits Unbuffered DDR SO-DIMM HYMD512M646B(L)FS8-J/M/K/H/L Document Title 128Mx64 bits Unbuffered DDR SO-DIMM Revision History No. 0.1 History Initial Draft Draft Date Jan. 2004 Remark www.DataSheet4U.com This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / Jan. 2004 1 128Mx64 bits Unbuffered DDR SO-DIMM HYMD512M646B(L)FS8-J/M/K/H/L DESCRIPTION www.DataSheet4U.com Hynix HYMD512M646B(L)FS8-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 128Mx64 high-speed memory arrays. Hynix HYMD512M646B(L)FS8-J/M/K/H/L series consists of eight 128Mx8 DDR SDRAM in FBGA packages on a 200pin glass-epoxy substrate. Hynix HYMD512M646B(L)FS8-J/M/K/H/L series provide a high performance 8-byte interface in 67.60mmX 31.75mm form factor of industry standard. It is suitable for easy interchange and addition. Hynix HYMD512M646B(L)FS8-J/M/K/H/L series is designed for high speed of up to 166MHz and offers fully synchronous operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bi...