HYMD512G726BF8N-D43

128Mx72 bits Registered DDR SDRAM DIMM HYMD512G726B(L)F8N-D43/J DESCRIPTION www.DataSheet4U.com Preliminary Hynix 64M x 8 series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128M x 72 high-speed memory arrays. Hynix HYMD512G726B(L)F8N-D43/J series consists of eighteen 64M x 8 DDR SDRAM in FBGA packages on a 184pin glass-epoxy substrate. Hynix HYMD512G726B(L)F8N-D43/J series provide a high performance 8-byte interface in 5.25" width form factor of industry standard. It is suitable for easy interchange and addition. Hynix HYMD512G726B(L)F8N-D43/J series is designed for high speed of up to 200MHz and offers fully synchronous operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and burst lengths allow variety of device operation in high performance memory system. Hynix HYMD512G726B(L)F8N-D43/J series incorporates SPD(serial presence detect). Serial presence detect function is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify DIMM ...