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HYMD116M725BH8-H

Hynix Semiconductor

Unbuffered DDR SDRAM SO-DIMM

www.DataSheet4U.com 16Mx72 bits Unbuffered DDR SDRAM SO-DIMM HYMD116M725B(L)8-J/M/K/H/L DESCRIPTION PRELIMINARY Hynix H...



HYMD116M725BH8-H

Hynix Semiconductor


Octopart Stock #: O-666645

Findchips Stock #: 666645-F

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Description
www.DataSheet4U.com 16Mx72 bits Unbuffered DDR SDRAM SO-DIMM HYMD116M725B(L)8-J/M/K/H/L DESCRIPTION PRELIMINARY Hynix HYMD116M725B(L)8-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 16Mx72 high-speed memory arrays. Hynix HYMD116M725B(L)8-J/M/K/H/L series consists of nine 16Mx8 DDR SDRAM in 400mil TSOP II packages on a 200pin glass-epoxy substrate. Hynix HYMD116M725B(L)8-J/M/K/H/L series provide a high performance 8-byte interface in 67.60mmX 31.75mm form factor of industry standard. It is suitable for easy interchange and addition. Hynix HYMD116M725B(L)8-J/M/K/H/L series is designed for high speed of up to 166MHz and offers fully synchronous operations referenced to both rising and falling edges of differential clock inputs. While all addresses and control inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_2. High speed frequencies, programmable latencies and burst lengths allow variety of device operation in high performance memory system. Hynix HYMD116M725B(L)8-J/M/K/H/L series incorporates SPD(serial presence detect). Serial presence detect function is implemented via a serial 2,048-bit EEPROM. The first 128 bytes of seri...




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