TC2182

www.DataSheet4U.com TC2182 REV4_20070504 Low Noise Ceramic Packaged PHEMT GaAs FETs FEATURES 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOTO ENLARGEMENT DESCRIPTION The TC2182 is a high performance field effect transistor housed in a ceramic micro-x package with TC1102 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga IDSS gm VP BVDGO Rth CONDITIONS Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 0.32mA Drain-Gate Breakdown Voltage at IDGO = 0.08mA Thermal Resistance MIN 10 TYP 0.5 13 48 55 -1.0* 9 250 MAX 0.7 UNIT dB dB mA mS Volts Volts °C/W 5 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS IGS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Gate Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 5.0 V -3.0 V IDSS 160 µA 17 dBm 150 mW 175 °C - 65 °C to +175 °C TYPICAL NOISE PARAMETERS (TA=25 °C)...