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ACE2341
Technology
Description
P-Channel Enhancement Mode MOSFET
The ACE2341 is the P-Channel lo...
www.DataSheet4U.com
ACE2341
Technology
Description
P-Channel Enhancement Mode MOSFET
The ACE2341 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
-20V/-3.3A, RDS(ON)=45mΩ@VGS=-4.5V -20V/-2.8A, RDS(ON)= 55mΩ@VGS=-2.5V -20V/-2.3A, RDS(ON)= 65mΩ@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
Application
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ TA=25℃ TA=70℃
Symbol Typical Unit VDSS VGSS ID IDM IS PD TJ TSTG RθJA -20 ±12 -4.0 -2.8 -12 -1.0 1.25 0.8 V V A A A W
Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient
-55/150 ℃ -55/150 ℃ 140 ℃/W
VER 1.2
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