ACE2305

www.DataSheet4U.com ACE2305 Technology Description P-Channel Enhancement Mode MOSFET The ACE2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features -15V/-3.5A, RDS(ON)=70mΩ@VGS=-4.5V -15V/-3.0A, RDS(ON)=85mΩ@VGS=-2.5V -15V/-2.0A, RDS(ON)=105mΩ@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol Typical Unit VDSS VGSS ID IDM IS PD TJ TSTG RθJA -15 ±12 -3.5 -2.8 -10 -1.6 1.25 0.8 150 120 V V A A A W ℃ ℃/W Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient -55/150 ℃ VER 1.2 1 www.DataSheet4U.com ...