ACE2304

www.DataSheet4U.com ACE2304 Technology Description N-Channel Enhancement Mode MOSFET The ACE2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features 30V/3.2A, RDS(ON)=65mΩ@VGS=10V 30V/2.0A, RDS(ON)=90mΩ@VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings Symbol Max Unit VDSS 30 V VGSS ±20 V TA=25℃ 3.2 Continuous Drain Current (TJ=150℃) A ID TA=70℃ 2.6 Pulsed Drain Current IDM 10 A Continuous Source Current (Diode Conduction) IS 1.25 A TA=25℃ 1.25 Power Dissipation W PD TA=70℃ 0.8 O Operating Junction Temperature TJ 150 C Storage Temperature Range TSTG -55/150 OC Thermal Resistance-Junction to Ambient RθJA 100 OC/W Parameter Drain-Source Voltage Gate-Source Voltage VER 1.2 1 www.DataSheet4U.com ACE2304 Technology Packaging Type SOT-23-3 3 N-Channel Enhancement Mode MOSFET Pin Symbol Description 1 G Gat...