ACE2303

www.DataSheet4U.com ACE2303 Technology Description P-Channel Enhancement Mode MOSFET The ACE2303 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features -30V/-2.6A, RDS(ON)=130mΩ@VGS=-10V -30V/-2.0A, RDS(ON)=180mΩ@VGS=-4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol Typical Unit VDSS VGSS ID IDM IS PD TJ TSTG RθJA -30 ±20 -3.0 -2.0 -10 -1.25 1.25 0.8 150 100 V V A A A W ℃ ℃/W Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient -55/150 ℃ VER 1.2 1 www.DataSheet4U.com ACE2303 Technology Packaging Type ...