N-Channel PowerTrench MOSFET
FDMC7660 N-Channel PowerTrench® MOSFET
June 2012
FDMC7660
N-Channel PowerTrench® MOSFET
30 V, 20 A, 2.2 mΩ
Features
...
Description
FDMC7660 N-Channel PowerTrench® MOSFET
June 2012
FDMC7660
N-Channel PowerTrench® MOSFET
30 V, 20 A, 2.2 mΩ
Features
General Description
Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Applications
DC - DC Buck Converters Point of Load High Efficiency Load Switch and Low Side Switching
Top Bottom
S Pin 1 S S G
S S
D D
D D D D
Power 33
S G
D D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed
TC = 25°C TC = 25°C TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a) (Note 3)
(Note 1a)
Ratings 30 ±20 40 100 20 200 200 41 2.3
-55 to + 150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Info...
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