Document
www.DataSheet4U.com
ACE7400
Technology Description
N-Channel Enhancement Mode MOSFET
The ACE7400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
• • • • • • • • • • • •
30V/2.8A, RDS(ON)=77mΩ@VGS=10V 30V/2.3A, RDS(ON)=85mΩ@VGS=4.5V 30V/1.5A, RDS(ON)=110mΩ@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability
Application
Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
Absolute Maximum Ratings
Symbol Max Unit VDSS 30 V VGSS ±12 V TA=25℃ 2.8 Continuous Drain Current (TJ=150℃) A ID TA=70℃ 2.1 Pulsed Drain Current IDM 10 A Continuous Source Current (Diode Conduction) IS 1.25 A TA=25℃ 0.33 Power Dissipation W PD TA=70℃ 0.21 O Operating Junction Temperature TJ 150 C O Storage Temperature Range TSTG -55/150 C Thermal Resistance-Junction to Ambient RθJA 100 OC/W Parameter Drain-Source Voltage Gate-Source Voltage
VER 1.2
1
www.DataSheet4U.com
ACE7400
Technology Packaging Type
SOT-23-3
3
N-Channel Enhancement Mode MOSFET
Pin Symbol Description 1 G Gate 2 S Source 3 D Drain
1 2
Ordering information
Selection Guide ACE7400 XX + H Halogen - free Pb - free CM : SOT-323
Electrical Characteristics
TA=25℃, unless otherwise noted
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance
Symbol V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON)
Conditions Static VGS=0V, ID=-250uA VDS=VGS, ID=-250uA VDS=0V,VGS=±12V VDS=24V, VGS=0V VDS=24V, VGS=0V TJ=55℃ VDS≧4.5V, VGS=10V VDS≧4.5V, VGS=-4.5V VGS=10V, ID=2.8A VGS=4.5V, ID=2.3A
Min. 30 0.8
Typ.
Max.
Unit
1.6 ±100 -1 10
V nA uA A
6 4 0.062 0.070 0.077 0.085 VER 1.2
Ω 2
www.DataSheet4U.com
ACE7400
0.110 S 1.2 6 nC V
Technology
N-Channel Enhancement Mode MOSFET
VGS=2.5V, ID=1.5A 0.095 4.6 0.82 4.2 VDS=15V, VGS=4.5V, ID=-2.0A 0.6 1.5 350 VDS=15V, VGS=0V, f=1MHz 55 41 2.5 2.5 20 4 pF VDS=4.5V,ID=2.8A IS=1.25A, VGS=0V Dynamic
Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time
Gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDD=15V, RL=10Ω, VGEN=10V, RG=3Ω
nS
Typical Performance Characteristics
Output Characteristics Transfer Characteristics
VDS-Drain-to-Source Voltage (V)
VGS-Gate-to-Source Voltage (V)
VER 1.2
3
www.DataSheet4U.com
ACE7400
Technology
On-Resistance vs. Drain Current
N-Channel Enhancement Mode MOSFET
Capacitance
ID-Drain Current (A)
VDS-Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
Qg-Total Gate Charge (nC)
TJ-Junction Temperature (℃)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD-Source-to-Drain Voltage (V)
VGS-Gate-to-Source Voltage (V)
VER 1.2
4
www.DataSheet4U.com
ACE7400
Technology
Threshold Voltage
N-Channel Enhancement Mode MOSFET
Single Pulse Power
TJ-Temperature(℃)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to Foot
Square Wave Pulse Duration (sec)
VER 1.2
5
www.DataSheet4U.com
ACE7400
Technology Packing Information
SOT-323
N-Channel Enhancement Mode MOSFET
VER 1.2
6
www.DataSheet4U.com
ACE7400
Technology
N-Channel Enhancement Mode MOSFET
Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued.