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ACE7400 Dataheets PDF



Part Number ACE7400
Manufacturers ACE Technology
Logo ACE Technology
Description N-Channel Enhancement Mode MOSFET
Datasheet ACE7400 DatasheetACE7400 Datasheet (PDF)

  www.DataSheet4U.com                                                                                        ACE7400                                               Technology Description N-Channel Enhancement Mode MOSFET The ACE7400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low v.

  ACE7400   ACE7400


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  www.DataSheet4U.com                                                                                        ACE7400                                               Technology Description N-Channel Enhancement Mode MOSFET The ACE7400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features • • • • • • • • • • • • 30V/2.8A, RDS(ON)=77mΩ@VGS=10V 30V/2.3A, RDS(ON)=85mΩ@VGS=4.5V 30V/1.5A, RDS(ON)=110mΩ@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings Symbol Max Unit VDSS 30 V VGSS ±12 V TA=25℃ 2.8 Continuous Drain Current (TJ=150℃) A ID TA=70℃ 2.1 Pulsed Drain Current IDM 10 A Continuous Source Current (Diode Conduction) IS 1.25 A TA=25℃ 0.33 Power Dissipation W PD TA=70℃ 0.21 O Operating Junction Temperature TJ 150 C O Storage Temperature Range TSTG -55/150 C Thermal Resistance-Junction to Ambient RθJA 100 OC/W Parameter Drain-Source Voltage Gate-Source Voltage VER 1.2 1    www.DataSheet4U.com                                                                                        ACE7400                                               Technology Packaging Type SOT-23-3 3 N-Channel Enhancement Mode MOSFET Pin Symbol Description 1 G Gate 2 S Source 3 D Drain 1 2 Ordering information Selection Guide ACE7400 XX + H Halogen - free Pb - free CM : SOT-323 Electrical Characteristics TA=25℃, unless otherwise noted Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Symbol V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) Conditions Static VGS=0V, ID=-250uA VDS=VGS, ID=-250uA VDS=0V,VGS=±12V VDS=24V, VGS=0V VDS=24V, VGS=0V TJ=55℃ VDS≧4.5V, VGS=10V VDS≧4.5V, VGS=-4.5V VGS=10V, ID=2.8A VGS=4.5V, ID=2.3A Min. 30 0.8 Typ. Max. Unit 1.6 ±100 -1 10 V nA uA A 6 4 0.062 0.070 0.077 0.085 VER 1.2 Ω 2   www.DataSheet4U.com                                                                                        ACE7400 0.110 S 1.2 6 nC V                                               Technology N-Channel Enhancement Mode MOSFET VGS=2.5V, ID=1.5A 0.095 4.6 0.82 4.2 VDS=15V, VGS=4.5V, ID=-2.0A 0.6 1.5 350 VDS=15V, VGS=0V, f=1MHz 55 41 2.5 2.5 20 4 pF VDS=4.5V,ID=2.8A IS=1.25A, VGS=0V Dynamic Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDD=15V, RL=10Ω, VGEN=10V, RG=3Ω nS Typical Performance Characteristics Output Characteristics Transfer Characteristics VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) VER 1.2 3   www.DataSheet4U.com                                                                                        ACE7400                                               Technology On-Resistance vs. Drain Current N-Channel Enhancement Mode MOSFET Capacitance ID-Drain Current (A) VDS-Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature Qg-Total Gate Charge (nC) TJ-Junction Temperature (℃) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD-Source-to-Drain Voltage (V) VGS-Gate-to-Source Voltage (V) VER 1.2 4   www.DataSheet4U.com                                                                                        ACE7400                                               Technology Threshold Voltage N-Channel Enhancement Mode MOSFET Single Pulse Power TJ-Temperature(℃) Time (sec) Normalized Thermal Transient Impedance, Junction-to Foot Square Wave Pulse Duration (sec) VER 1.2 5   www.DataSheet4U.com                                                                                        ACE7400                                               Technology Packing Information SOT-323 N-Channel Enhancement Mode MOSFET VER 1.2 6   www.DataSheet4U.com                                                                                        ACE7400                                               Technology N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued.


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