ACE3413

www.DataSheet4U.com ACE3413 Technology Description P-Channel Enhancement Mode MOSFET The ACE3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features -20V/-3.4A, RDS(ON)=95mΩ@VGS=-4.5V -20V/-2.4A, RDS(ON)=120mΩ@VGS=-2.5V -20V/-1.7A, RDS(ON)=145mΩ@VGS=-1.8V -20V/-1.0A, RDS(ON)=210mΩ@VGS=-1.25V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Power Management in Note book Portable Equipment Battery Powered System Load Switch DSC LCD Display inverter Absolute Maximum Ratings (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol Typical Unit VDSS VGSS ID IDM IS PD TJ TSTG RθJA -20 ±12 -3.5 -2.8 -15 -1.4 1.25 0.8 V V A A A W Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient -55/150 ℃ -55/150 ℃ 150 ℃/W VER 1....