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CY7C1373D

Cypress Semiconductor

18-Mbit (512 K x 36/1 M x 18) Flow-Through SRAM

CY7C1371D CY7C1373D 18-Mbit (512 K × 36/1 M × 18) Flow-Through SRAM with NoBL™ Architecture 18-Mbit (512 K × 36/1 M × 1...


Cypress Semiconductor

CY7C1373D

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CY7C1371D CY7C1373D 18-Mbit (512 K × 36/1 M × 18) Flow-Through SRAM with NoBL™ Architecture 18-Mbit (512 K × 36/1 M × 18) Flow-through SRAM with NoBL™ Architecture Features ■ No Bus Latency (NoBL) architecture eliminates dead cycles between write and read cycles ■ Supports up to 133-MHz bus operations with zero wait states ❐ Data is transferred on every clock ■ Pin-compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need to use OE ■ Registered inputs for flow through operation ■ Byte write capability ■ 3.3 V/2.5 V I/O power supply (VDDQ) ■ Fast clock-to-output times ❐ 6.5 ns (for 133-MHz device) ■ Clock enable (CEN) pin to enable clock and suspend operation ■ Synchronous self-timed writes ■ Asynchronous output enable ■ Available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non Pb-free 119-ball BGA, and 165-ball FBGA packages ■ Three chip enables for simple depth expan...




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