STM4880

www.DataSheet4U.com STM4880 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID 9.6A R DS(ON) (m Ω) Max 17 @ VGS=10V 26 @ VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a TA=25°C TA=70°C Limit 30 ±20 9.6 7.7 40 20 Units V V A A A mJ W W °C -Pulsed Sigle Pulse Avalanche Energy d Maximum Power Dissipation a TA=25°C TA=70°C 2.5 1.6 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. Jun,26,2008 1 www.samhop.com.tw www.DataSheet4U.com STM4880 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=24V , VGS=0V Min 30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance VGS= ±20V , VDS=0V 1 ±10 uA uA VDS=VGS , ID=250uA VGS=10V , ID=9.6A VGS=4.5V , ID=7.8A VDS=10V , ID=9.6A 1.0 1.8 13 ...