(PT200S12 / PT200S16) DIODE MODULE
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DIODE MODULE
FEATURES
* Isolated Base * 3 Phase Bridge Circuit * Designed Power Circuit Board * Hig...
Description
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DIODE MODULE
FEATURES
* Isolated Base * 3 Phase Bridge Circuit * Designed Power Circuit Board * High Surge Capability * UL Recognized, File No. E187184
200A/1200V/1600V
PT200S12 PT200S16
OUTLINE DRAWING
TYPICAL APPLICATIONS
* Rectified For General Use
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage *1 Non Repetitive Peak Reverse Voltage *1
Approx Net Weight:370g Symbol VRRM VRSM
Type / Grade
PT200S12 1200 1300 PT200S16 1600 1750
Max Rated Value
Unit
V
Parameter
Average Rectified Output Current Surge Forward Current *1 I Squared t *1 Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals IO(AV) IFSM I2t Tjw Tstg Viso Ftor
Conditions
3-Phase Full Wave Rectified Tc=Tt(Terminal)=72°C 50 Hz Half Sine Wave,1Pulse Non-repetitive 2msec to 10msec
Unit
A A
200 1850
170000 A2s -40 to +150 °C -40 to +125 °C Base Plate to Terminals, AC1min 2500 V Greased M5 Screw 2.4 to 2.8 Nm M5 2.4 to 2.8
Electrical Thermal Characteristics
Characteristics
Peak Reverse Current *1 Peak Forward Voltage *1 Thermal Resistance *1: Value Per 1Arm Symbol Test Conditions Max. Unit 15 1.35 0.1 0.06 mA V °C/W IRM VRM= VRRM, Tj= 150°C VFM IFM= 200A, Tj=25°C Rth(j-c) Junction to Case (Total) Base Plate to Heat Sink with Thermal Rth(c-f) Compound (Total)
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PT200Sxx OUTLINE DRAWING (Dimensions in mm)
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