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SBT250-04R Dataheets PDF



Part Number SBT250-04R
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description Schottky Barrier Diode 40V 25A Rectifier
Datasheet SBT250-04R DatasheetSBT250-04R Datasheet (PDF)

Ordering number : ENN7797 SBT250-04R www.DataSheet4U.com SBT250-04R Applications • Schottky Barrier Diode (Twin Type · Cathode Common) 40V, 25A Rectifier High frequency rectification (switching regulators, converters, choppers). Features • • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.55V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Micaless package facilitating easy mounting. Specifications Absolute Max.

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Ordering number : ENN7797 SBT250-04R www.DataSheet4U.com SBT250-04R Applications • Schottky Barrier Diode (Twin Type · Cathode Common) 40V, 25A Rectifier High frequency rectification (switching regulators, converters, choppers). Features • • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.55V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Micaless package facilitating easy mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz resistive load, Sine wave Tc=106°C 50Hz sine wave, 1 cycle Conditions Ratings 40 44 25 120 --55 to +150 --55 to +150 Unit V V A A °C °C Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Thermal Resistance Symbol VR VF IR C Rth(j-c) Conditions IR=3mA, Tj=25°C* IF=10A, Tj=25°C* VR=20V, Tj=25°C* VR=10V, Tj=25°C* Junction-Case : Smoothed DC Ratings min 40 0.55 0.3 510 2.4 typ max Unit V V mA pF °C / W Note) * : Value per element Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62405SD MS IM TB-00001564 No.7797-1/3 SBT250-04R Package Dimensions unit : mm 7505-001 Electrical Connection www.DataSheet4U.com Anode 16.0 3.4 5.0 8.0 Anode 5.6 3.1 22.0 21.0 Cathode 2.0 4.0 2.8 2.0 20.4 2.0 0.6 1.0 1 2 3 3.5 1 : Anode 2 : Cathode 3 : Anode SANYO : TO-3PML 5.45 5.45 100 7 5 3 2 IF -- VF Represented by max 50°C Tj=1 25°C 5 3 2 IR -- VR 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.4 0.8 1.2 1.6 IT09142 Reverse Current, IR -- mA Forward Current, IF -- A 100 7 5 3 2 10 7 5 3 2 1.0 0 10 max 0°C 5 1 Tj= yp °C t 150 yp °C t 125 yp °C t 100 20 30 40 50 IT09143 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 20 18 Average Reverse Power Dissipation, PR(AV) -- W PF(AV) -- IO Reverse Voltage, VR -- V 9 8 7 6 5 4 3 2 180° 1 0 0 10 20 30 40 360° PR(AV) -- VRM (3) (4) 16 14 Sin.


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