P-CHANNEL ENHANCEMENT MODE POWER MOSFET
CYStech Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Spec. No. : C391Q8-A www.DataSheet4U.com Issued Date ...
Description
CYStech Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Spec. No. : C391Q8-A www.DataSheet4U.com Issued Date : 2008.07.17 Revised Date : Page No. : 1/7
MEP4435Q8
Description
The MEP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features
RDS(ON)=20mΩ@VGS=-10V, ID=-10A RDS(ON)=35mΩ@VGS=-5V, ID=-7A Simple drive requirement Low on-resistance Fast switching speed Pb-free package
Equivalent Circuit
MEP4435Q8
Outline
SOP-8
G:Gate S:Source D:Drain
MEP4435Q8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=100 °C Pulsed Drain Current (Note 1) Total Power Dissipation @ TA=25 °C (Note 2) Linear Derating Factor Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 2) Symbol BVDSS VGS ID ID IDM Pd Tj Tstg Rth,j-a
Spec. No. : C391Q8-A www.DataSheet4U.com Issued Date : 2008.07.17 Revised Date : Page No. : 2/7
Limits -30 ±25 -10 -8 -40 2.5 0.02 -55~+150 -55~+150 50
Unit V V A A A W W / °C °C °C °C/W
Note : 1.Pulse width limited by maximum junction temperatur...
Similar Datasheet