ECH8901

Ordering number : ENA1472 ECH8901 www.DataSheet4U.com SANYO Semiconductors DATA SHEET ECH8901 Appllications PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Charger. Features Composite type, facilitating high-density mounting. Mounting height 0.9mm. IECO is guaranteed for preventing reverse flow from the collector to the emitter. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP PW≤10μs, duty cycle≤1% --12 ±10 -6 --40 V V A A VCBO VCEO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (900mm2×0.8mm) 1unit --30 --30 -5 -3 -6 --600 1.3 150 --55 to +150 V V V A A mA W °C °C Symbol Conditions Ratings Unit Marking : LA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sus...