CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
D44H11E3
Spec. No. : C606E3-A Issued Date : 2005.0...
CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
D44H11E3
Spec. No. : C606E3-A Issued Date : 2005.01.03 Revised Date :2007.11.01 Page No. : 1/4
Features
Low VCE(sat) High BVCEO Excellent current gain characteristics RoHS compliant package
Symbol
D44H11E3
Outline
TO-220AB
B:Base C:Collector E:Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : 1. Single Pulse , Pw≦380μs,Duty≦2%.
D44H11E3
Symbol
VCBO VCEO VEBO
IC ICP PD PD
RθJA
RθJC
Tj Tstg
Limits
80 80 6 10 20 (Note 1) 2
50
62.5 2.5 150 -55~+150
Unit
V V V
A
W
°C/W °C/W
°C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C606E3-A Issued Date : 2005.01.03 Revised Date :2007.11.01 Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCEO(SUS) ICES IEBO
*VCE(sat) *VBE(sat)
*hFE *hFE
fT Cob
Min.
80 60 40 -
Typ.
0.3 1.0 50 130
Max.
10 50 0.6 1.5 -
Unit
V μA μA V V MHz pF
Test Conditions
IC=30mA, IB=0 VCE=80V, VBE=0 VEB=5V, IC=0 IC=8A, IB=0.4A IC=8A, IB=0.8A VCE=1V, IC=2A VCE=1V, IC=4A VCE=6V, IC=500mA, f=20MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
D44H11E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C606E3-A Issued Da...