CMBD914N3

CYStech Electronics Corp. High –speed switching diode CMBD914N3 Spec. No. : C303N3 Issued Date : 2003.04.12 Revised Date : 2010.10.21 Page No. : 1/6 Description The CMBD914N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT-23 plastic SMD package. Equivalent Circuit CMBD914N3 21 3 1：Anode 2：Not Connected 3：Cathode Outline SOT-23 Cathode Anode NC Features Small plastic SMD package High switching speed: max. 4ns Continuous reverse voltage: max. 100V Repetitive peak reverse voltage: max. 110V Repetitive peak forward current: max. 500mA. Pb-free package Applications High-speed switching in thick and thin-film circuits. CMBD914N3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings @TA=25℃ Spec. No. : C303N3 Issued Date : 2003.04.12 Revised Date : 2010.10.21 Page No. : 2/6 Parameters Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current @square wave, Tj=25℃ prior to surge Total power dissipation(Note 1) Junction Temperature Storage Temperature Note 1: Device mounted on an FR-4 PCB. t=1μs t=1ms t=1s Symbol Min Max Unit VRRM - 110 V VR - 100 V IF - 215 mA IFRM 500 mA IFSM - 4A 1A - 0.5 A Ptot 250 mW Tj - 150 °C Tstg -65 +150 °C Electrical Characteristics @ Tj=25℃ unless otherwise specified Parameters Forward voltage Reverse current Diode capacitance Reverse recovery t...