SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
SOT-23 Formed SMD Package
www.DataSheet4...
Description
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
SOT-23 Formed SMD Package
www.DataSheet4U.com
CMBD1201, CMBD1202, CMBD1203 CMBD1204, CMBD1205, CMBD4148
SILICON PLANAR EPITAXIAL HIGH SPEED DIODES
CMBD1201, 1202, CMBD4148 are all single diodes CMBD1203 is a dual diode, in series CMBD1204 is a dual diode, common cathode CMBD1205 is a dual diode, common anode
Marking
CMBD1201 – 24 CMBD1202 – 25 CMBD1203 – 26
CMBD1204 – 27 CMBD1205 – 28 CMBD4148 – 5H
2 CMBD1201 3 CMBD4148
1
1 CMBD1202
3
2
2 CMBD1203
3
1
2
CMBD1204 3
1
2
CMBD1205 3
1
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
ABSOLUTE MAXIMUM RATINGS (per diode) Continuous reverse voltage Repetitive peak reverse voltage Repetitive peak forward current Forward current Junction temperature Forward voltage at IF = 10 mA
VR VRRM IFRM IF Tj VF
max. max. max. max. max.
<
75 V 100 V 500 mA 215 mA 150 ° C 0.855 V
Continental Device India Limited
Data Sheet
Page 1 of 3
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CMBD1201, CMBD1202, CMBD1203 CMBD1204, CMBD1205, CMBD4148
Reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA
trr <
4 ns
RATINGS (per diode) (at TA = 25°C unless otherwise specified) Limiting values
Continuous reverse voltage Repetitive peak reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current (per crystal)
VR VRRM IFRM IF
t = 1 µs t = 1 ms t=1s Storage temperature
IFSM IFSM IFSM Tstg
Junction temp...
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