CYStech Electronics Corp.
Spec. No. : C309N3-H Issued Date : 2003.06.30 Revised Date : 2011.02.17 Page No. : 1/6
High ...
CYStech Electronics Corp.
Spec. No. : C309N3-H Issued Date : 2003.06.30 Revised Date : 2011.02.17 Page No. : 1/6
High Voltage
PNP Epitaxial Planar
Transistor
BTPA94N3
BVCEO IC VCESAT(max)
-400V -0.15A -0.3V
Description
High breakdown voltage. (BVCEO=-400V) Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA. Wide SOA (safe operation area). Complementary to BTNA44N3. Pb-free package
Symbol
BTPA94N3
Outline
SOT-23
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC Pd RθJA Tj Tstg
Limits
-400 -400
-6 -150 350 357 150 -55~+150
Unit
V V V mA mW °C/W °C °C
BTPA94N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C309N3-H Issued Date : 2003.06.30 Revised Date : 2011.02.17 Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO ICES VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) hFE 1 *hFE 2 *hFE 3 *hFE 4 Cob
Min.
-400 -400 -6
80 100 50 20 -
Typ.
-
Max.
-100 -100 -500 -0.2 -0.2 -0.3 -0.9 270 6
Unit Test Conditions
V IC=-50μA V IC=-1mA V IE=-50μA nA VCB=-400V nA VEB=-6V nA VCE=-400V V IC=-1mA, IB=-0.1mA V IC=-10mA, IB=-1mA V IC=-50mA, IB=-5mA V IC=-20mA, IB=-2mA - VCE=-10V, IC=-1mA - VCE=-10V, IC=-10mA - VCE=-10V, IC=-50mA - VCE=-10V, IC=-100mA pF VCB=-10V, IE=0A,f...
