CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD882I3
BVCEO IC RCESAT
Spec. No. : C848I3-H Is...
CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
BTD882I3
BVCEO IC RCESAT
Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2010.11.05 Page No. : 1/6
30V 3A 125mΩ typ.
Features
Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772I3 RoHS compliant package
Symbol
BTD882I3
Outline
TO-251
B:Base C:Collector E:Emitter
BB CC E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw≦350μs,Duty≦2%.
Symbol
VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃)
Tj Tstg
BTD882I3
Limit
40 30 5 3 7 1 10
150
-55~+150
*1
Unit
V V V A A
W
°C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2010.11.05 Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob
Min.
40 30 5 150 180 -
Typ.
0.25 90 45
Max.
1 1 0.5 2 560 -
Unit
V V V μA μA V V MHz pF
Test Conditions
IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE 2
Rank
P
Range
180~390
E 270~560
Ordering Information
Device BTD882I3
Package
T...