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BTD2195L3

Cystech Electonics Corp

NPN Transistor

CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD2195L3 Spec. No. : C654L3 Issued Date : 2007.02.09 Revised...


Cystech Electonics Corp

BTD2195L3

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CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD2195L3 Spec. No. : C654L3 Issued Date : 2007.02.09 Revised Date : 2014.04.07 Page No. : 1/6 Description The BTD2195L3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit BTD2195L3 B C Outline SOT-223 C E B:Base C:Collector E:Emitter E C B Ordering Information Device BTD2195L3-0-T3-X Package SOT-223 (Pb-free lead plating package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name BTD2195L3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C654L3 Issued Date : 2007.02.09 Revised Date : 2014.04.07 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse Pw≦350μs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP Pd RθJC Tj Tstg Limits 130 120 5 4 6 (Note ) 5 25 150 -55~+150 Unit V V V A A W °C/W °C °C Characteristics (Ta=25°C) Symbol BVCEO BVCBO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. 120 140 - 1000 500 - Typ. - - Max. 100 1...




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